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| STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmeshTM MOSFET Table 1: General Features TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 ID 18 A 18 A 18 A (*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 TO-220FP 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters I2PAK 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N MARKING B21NM50N B21NM50N F21NM50N P21NM50N W21NM50N PACKAGE D2PAK I2PAK TO-220FP TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE TUBE TUBE Rev. 3 October 2005 1/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Table 3: Absolute Maximum ratings Symbol Parameter TO-220 / / / TO-247 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Viso Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --55 to 150 150 18 11 72 140 1.12 15 2500 D2PAK Value I2PAK 500 500 25 18 (*) 11 (*) 72 (*) 30 0.23 TO-220FP V V V A A A W W/C V/ns V C Unit ( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed (1) ISD 18 A, di/dt 400 A/s, VDD =80% V(BR)DSS Table 4: Thermal Data TO-220 / DPAK / IPAK / TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.89 62.5 300 TO-220FP 4.21 C/W C/W C Table 5: Avalanche Characteristics Symbol IAS EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 9 480 Unit A mJ 2/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS dv/dt(2) IDSS Parameter Drain-source Breakdown Voltage Drain Source Voltage Slope Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions Min. ID = 1mA, VGS = 0 Vdd=400V, Id=25A, Vgs=10V VDS = Max Rating VDS = Max Rating TC = 125 C VGS = 20V VDS = VGS, ID = 250 A VGS = 10V, ID = 9 A 2 3 0.150 500 44 1 10 100 4 0.190 Value Typ. Max. V V/ns A A nA V Unit IGSS VGS(th) RDS(on) (2) Characteristic value at turn off on inductive load Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (*) td(on) tr td(off) tf Qg Qgs Qgd Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance Test Conditions VDS = 15 V, ID = 9 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 12 1950 420 60 270 22 18 90 30 65 10 30 1.6 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VGS = 0V, VDS = 0V to 400V VDD =250 V, ID = 9 A RG = 4.7 VGS = 10 V (see Figure 18) VDD = 400V, ID = 18 A, VGS = 10V, (see Figure 21) f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 8: Source Drain Diode Symbol ISD ISDM VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A, VGS = 0 ISD = 18 A, di/dt = 100 A/s VDD = 100 V, Tj = 25C (see Figure 19) ISD = 18A, di/dt = 100 A/s VDD = 100 V, Tj = 150C (see Figure 19) 360 5 27 640 6.5 27 Test Conditions Min. Typ. Max. 18 72 1.5 Unit A A V ns C A ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 3/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 3: Safe Operating Area For TO-220 Figure 6: Thermal Impedance For TO-220 Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 9: Transconductance Figure 12: Static Drain-source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature 5/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 15: Source-Drain Forward Characteristics Figure 16: Normalized BVdss vs Temperature 6/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Figure 17: Unclamped Inductive Load Test Circuit Figure 20: Unclamped Inductive Wafeform Figure 18: Switching Times Test Circuit For Resistive Load Figure 21: Gate Charge Test Circuit Figure 19: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 9/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 10/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 11/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 12/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 13/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 14/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Table 9: Revision History Date 07-Sep-2005 28-Sep-2005 14-Oct-2005 Revision 1 2 3 Description of Changes First Release. Symbol changed in Table 5 Modified curves 5,8 15/16 STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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